3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier

S. Murakami, S. Tanaka, Y. Amamiya, H. Shimawaki, N. Goto, K. Honjo, Y. Ishida, Y. Saitoh, M. Yajima, Y. Hisada

研究成果: Paper

2 引用 (Scopus)

抜粋

A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.

元の言語English
ページ99-102
ページ数4
出版物ステータスPublished - 1996 12 1
イベントProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA
継続期間: 1996 11 31996 11 6

Other

OtherProceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium
Orlando, FL, USA
期間96/11/396/11/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • これを引用

    Murakami, S., Tanaka, S., Amamiya, Y., Shimawaki, H., Goto, N., Honjo, K., Ishida, Y., Saitoh, Y., Yajima, M., & Hisada, Y. (1996). 3.6-W 26GHz-band AlGaAs/GaAs HBT power amplifier. 99-102. 論文発表場所 Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium, Orlando, FL, USA, .