A 3.6-watt 26-GHz band AlGaAs/GaAs heterojunction bipolar transistor (HBT) power amplifier is described. The amplifier is composed of two common-base (CB) HBT chips, and achieves a output power of 3.63 W (35.6 dBm), power-added efficiency (PAE) of 21.2% and associated gain of 6.2 dB with a 1-dB bandwidth between 25.5 and 26.5 GHz. As far as we know, the output power obtained in this work is more than twice that obtained in other works in these frequency bands.
|出版ステータス||Published - 1996 12 1|
|イベント||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium - Orlando, FL, USA|
継続期間: 1996 11 3 → 1996 11 6
|Other||Proceedings of the 1996 18th Annual IEEE Gallium Arsenide Integrated Circuit Symposium|
|City||Orlando, FL, USA|
|Period||96/11/3 → 96/11/6|
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