40-Gb/s optical receiver IC chipset - including a transimpedance amplifier, a differential amplifier, and a decision circuit - using GaAs-based HBT technology

Y. Amamiya, Y. Suzuki, M. Kawanaka, K. Hosoya, Z. Yamazaki, M. Mamada, H. Takahashi, S. Wada, T. Kato, Y. Ikenaga, S. Tanaka, T. Takeuchi, H. Hida

研究成果: Conference article査読

21 被引用数 (Scopus)

抄録

GaAs-based HBTs with an InGaP emitter were used to develop key components of a 40-Gb/s optical receiver: a transimpedance amplifier, a differential main amplifier, and a decision circuit. The frequency response of the transimpedance amplifier was flattened by inserting an RC series circuit at the input stage. As a result, the transimpedance amplifier module produced a well-opened 43-Gb/s eye diagram with 400 mVp-p dynamic range. The differential main amplifier and the decision circuit produced 43-Gb/s eye diagrams with a large dynamic range of 700 mVp-p, which is the first 40-Gb/s demonstration using GaAs-based HBTs. These three ICs are thus applicable to a 40-Gb/s optical receiver.

本文言語English
ページ(範囲)87-90
ページ数4
ジャーナルIEEE MTT-S International Microwave Symposium Digest
1
出版ステータスPublished - 2002 1 1
イベント2002 IEEE MTT-S International Microwave Symposium Digest - Seattle, WA, United States
継続期間: 2002 6 22002 6 7

ASJC Scopus subject areas

  • 放射線
  • 凝縮系物理学
  • 電子工学および電気工学

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