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著者

  • Kazushige Horio
2011
36 引用 (Scopus)

Numerical analysis of buffer-trap effects on gate lag in AlGaN/GaN high electron mobility transistors

Nakajima, A., Fujii, K. & Horio, K., 2011 10 20, : : Jpn. J. Appl. Phys.. 50, p. 104303-1-104303-6

研究成果: Article

Physics-based simulation of back-electrode effects on lag and current collapse in field-plate AlGaN/GaN HEMTs

Onodera, H., Nakajima, A. & Horio, K., 2011 12 1, European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011. p. 45-48 4 p. 6102761. (European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011).

研究成果: Conference contribution

1 引用 (Scopus)

Simulation of field-plate effects on surface-state-related lag and current slump in GaAs FETs

Tanaka, T., Itagaki, K., Nakajima, A. & Horio, K., 2011 11 23, Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011. p. 595-598 4 p. (Technical Proceedings of the 2011 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2011; 巻数 2).

研究成果: Conference contribution

1 引用 (Scopus)
24 引用 (Scopus)

Two-dimensional analysis of field-plate effects on surface-state-related current transients and power slump in GaAs FETs

Horio, K., Tanaka, T., Itagaki, K. & Nakajima, A., 2011 3 1, : : IEEE Transactions on Electron Devices. 58, 3, p. 698-703 6 p., 5667052.

研究成果: Article

24 引用 (Scopus)
14 引用 (Scopus)
32 引用 (Scopus)
3 引用 (Scopus)

Buffer-related gate lag in AlGaN/GaN HEMTs

Nakajima, A., Fujii, K. & Horio, K., 2012 7 1, : : Physica Status Solidi (C) Current Topics in Solid State Physics. 9, 7, p. 1658-1660 3 p.

研究成果: Article

4 引用 (Scopus)

Physics-based simulation of field-plate effects on breakdown characteristics in AlGaN/GaN HEMTs

Onodera, H. & Horio, K., 2012 12 1, European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012. p. 401-404 4 p. 6483821. (European Microwave Week 2012: "Space for Microwaves", EuMW 2012, Conference Proceedings - 7th European Microwave Integrated Circuits Conference, EuMIC 2012).

研究成果: Conference contribution

2 引用 (Scopus)

Removal of surface-related current slump in field-plate GaAs FETs

Hafiz, F., Kumeno, M., Tanaka, T. & Horio, K., 2012 12 1, 2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012. (2012 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2012).

研究成果: Conference contribution

Simulation of removal of surface-state-related lag and current slump in GaAs FETs

Hafiz, H., Kumeno, M. & Horio, K., 2012 8 17, Nanotechnology 2012: Electronics, Devices, Fabrication, MEMS, Fluidics and Computational - 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012. p. 582-585 4 p. (Technical Proceedings of the 2012 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2012).

研究成果: Conference contribution

2013
3 引用 (Scopus)

Analysis of removal of surface-state-related lags and current slump in GaAs FETs

Hafiz, H., Kumeno, M. & Horio, K., 2013 11 13, : : IEEE Electron Device Letters. 34, 11, p. 1361-1363 3 p., 6603270.

研究成果: Article

2 引用 (Scopus)

Numerical modeling of reduction in surface-related lags and current slump in GaAs FETs

Hafiz, F., Kumeno, M., Tanaka, T. & Horio, K., 2013 12 1, 2013 IEEE International Conference of IEEE Region 10, IEEE TENCON 2013 - Conference Proceedings. 6718452. (IEEE Region 10 Annual International Conference, Proceedings/TENCON).

研究成果: Conference contribution

Similarities of lags, current collapse and breakdown characteristics between source and gate field-plate AlGaN/GaN HEMTs

Hanawa, H., Onodera, H., Nakajima, A. & Horio, K., 2013 8 7, 2013 IEEE International Reliability Physics Symposium, IRPS 2013. p. CD.1.1-CD.1.5 6532058. (IEEE International Reliability Physics Symposium Proceedings).

研究成果: Conference contribution

5 引用 (Scopus)

Simulation of back-electrode effects on lags and current collapse in field-plate AlGaN/GaN HEMTs

Horio, K., Onodera, H. & Fukai, T., 2013 8 9, Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013. p. 497-500 4 p. (Technical Proceedings of the 2013 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2013; 巻数 2).

研究成果: Conference contribution

2014

Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

Onodera, H., Hanawa, H. & Horio, K., 2014 1 1, Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. Nano Science and Technology Institute, p. 499-502 4 p. (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; 巻数 2).

研究成果: Conference contribution

23 引用 (Scopus)

Numerical analysis of breakdown voltage enhancement in AlGaN/GaN HEMTs with a high-k passivation layer

Hanawa, H., Onodera, H., Nakajima, A. & Horio, K., 2014 3, : : IEEE Transactions on Electron Devices. 61, 3, p. 769-775 7 p., 6712055.

研究成果: Article

43 引用 (Scopus)
2015
4 引用 (Scopus)
5 引用 (Scopus)

Simulation of current slump removal in field-plate GaAs MESFETs

Nomoto, A., Sato, Y. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., 巻 4. p. 270-273 4 p.

研究成果: Conference contribution

Simulation of high-k passivation-layer effects on breakdown voltage in AlGaN/GaN HEMTs

Hanawa, H., Satoh, Y. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., 巻 4. p. 266-269 4 p.

研究成果: Conference contribution

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

Noda, N. & Horio, K., 2015, NSTI: Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2015. Taylor and Francis Inc., 巻 4. p. 274-277 4 p.

研究成果: Conference contribution

2016
3 引用 (Scopus)
5 引用 (Scopus)

Effects of buffer leakage current on breakdown voltage in AlGaN/GaN HEMTs with a high-k passivation layer

Satoh, Y., Hanawa, H. & Horio, K., 2016 12 7, EuMIC 2016 - 11th European Microwave Integrated Circuits Conference. Institute of Electrical and Electronics Engineers Inc., p. 341-344 4 p. 7777560

研究成果: Conference contribution

Simulation of buffer current effects on breakdown voltage in AIGaN/GaN HEMTs having passivation layers with different permittivity

Satoh, Y., Hanawa, H. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, 巻 4. p. 113-116 4 p.

研究成果: Conference contribution

Simulation of current slump removal in field-plate GaAs MESFETs with a thin passivation layer

Nomoto, A., Sato, Y. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, 巻 4. p. 117-120 4 p.

研究成果: Conference contribution

Simulation of lags and current collapse in field-plate AlGaN/GaN HEMTs with different types of buffer layers

Tsurumaki, R., Noda, N. & Horio, K., 2016, Advanced Manufacturing, Electronics and Microsystems - TechConnect Briefs 2016. TechConnect, 巻 4. p. 121-124 4 p.

研究成果: Conference contribution

2017
4 引用 (Scopus)

Effects of buffer acceptors on breakdown voltages of AlGaN/GaN HEMTs with a high-k passivation layer

Kawada, Y., Hanawa, H. & Horio, K., 2017, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, 巻 4. p. 31-34 4 p.

研究成果: Conference contribution

1 引用 (Scopus)

Reduction in lags and current collapse in field-plate AlGaN/GaN HEMTs with high acceptor density in a buffer layer

Saito, Y., Tsurumaki, R., Noda, N. & Horio, K., 2017 1 1, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. Case, F., Laudon, M., Romanowicz, B. & Case, F. (版). TechConnect, p. 27-30 4 p. (Advanced Materials - TechConnect Briefs 2017; 巻数 4).

研究成果: Conference contribution

5 引用 (Scopus)

Simulation of breakdown voltage enhancement in AlGaN/GaN HEMTs with double passivation layers

Horio, K. & Hanawa, H., 2017, Informatics, Electronics and Microsystems - TechConnect Briefs 2017. TechConnect, 巻 4. p. 39-42 4 p.

研究成果: Conference contribution

2018

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Nakamura, K., Hanawa, H. & Horio, K., 2018 11 27, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., p. 247-250 4 p. 8551096

研究成果: Conference contribution

Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

Nakano, K., Hanawa, H. & Horio, K., 2018 5, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., p. 131-134 4 p. 8734668. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

研究成果: Conference contribution

1 引用 (Scopus)

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

Kabemura, T., Hanawa, H. & Horio, K., 2018 1 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (版). TechConnect, 巻 4. p. 28-31 4 p.

研究成果: Conference contribution

5 引用 (Scopus)

Effect of deep-acceptor density in buffer layer on breakdown voltage of AIGaN/GaN HEMTs with high-k passivation layer

Ueda, S., Kawada, Y. & Horio, K., 2018 1 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (版). TechConnect, 巻 4. p. 24-27 4 p.

研究成果: Conference contribution

17 引用 (Scopus)

Simulation of breakdown characteristics of AlGaN/GaN hemts with double passivation layers

Nakano, K., Hanawa, H. & Horio, K., 2018 1 1, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. Laudon, M., Case, F., Romanowicz, B. & Case, F. (版). TechConnect, 巻 4. p. 20-23 4 p.

研究成果: Conference contribution