A 0.25 μ m inner sidewall-assisted super self-aligned gate heterojunction FET fabricated using all dry-etching technology for low voltage controlled LSIs

H. Hida, M. Tokushima, M. Fukaishi, Tadashi Maeda, Y. Ohno

研究成果: Conference contribution

6 引用 (Scopus)

抜粋

The first successful fabrication is reported for a high performance 0.25 μ m T-shaped gate pseudomorphic heterojunction FET without the conventional electron-beam lithography and wet etching technology, which often cause long turn-around times and poor reproducibility and controllability, resulting in big obstacles to producing GaAs LSIs. The novel device structure and fabrication process enables realizing very low power consumption GaAs VLSIs superior to even future Si LSIs, and have the following advantages. (i) 0.25 μ m gate formation by optical (stepper) lithography and anisotropic dry etching for SiO2 sidewalls, and smaller gate formation by an increase in sidewall thickness. (ii) Stable refractory metal gate electrode with low stress and high reliability. (iii) Low resistance T-shaped gate electrode of refractory and low resistivity multilayer metals. (iv) Small Rs and Rd due to ohmic electrodes self-aligned to T-shaped gate electrode, leading to small current saturation voltage Vdss, indispensable for low supply voltage controlled-LSIs. (v) Low damage dry etching of insulating films using low power magnetron ion etching. (vi) Formation of E/D-FETs with different VT using selective dry etching of GaAs to AlGaAs. (vii) High reproducibility and uniformity due to all dry etching technology.

元の言語English
ホスト出版物のタイトル1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
出版者Institute of Electrical and Electronics Engineers Inc.
ページ982-984
ページ数3
ISBN(電子版)0780308174
DOI
出版物ステータスPublished - 1992 1 1
外部発表Yes
イベント1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
継続期間: 1992 12 131992 12 16

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
1992-December
ISSN(印刷物)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
United States
San Francisco
期間92/12/1392/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • これを引用

    Hida, H., Tokushima, M., Fukaishi, M., Maeda, T., & Ohno, Y. (1992). A 0.25 μ m inner sidewall-assisted super self-aligned gate heterojunction FET fabricated using all dry-etching technology for low voltage controlled LSIs. : 1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 (pp. 982-984). [307591] (Technical Digest - International Electron Devices Meeting, IEDM; 巻数 1992-December). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEDM.1992.307591