A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF

Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Tatsuya Usami, Hideaki Kawamoto, Kazuyoshi Ueno, Hideki Gomi

研究成果: Article査読

抄録

A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.

本文言語English
ページ(範囲)1140-1144
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
37
3 SUPPL. B
DOI
出版ステータスPublished - 1998 3
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO<sub>2</sub> mask Al etching and plasma enhanced chemical vapor deposition SiOF」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル