抄録
A 0.7-μm-pitch double level aluminum (Al) interconnection technology on a 1-μm-high step is established for 1-Gbit dynamic random access memories (DRAMs). A SiO2 film which has a high resistance to Al etching was used as the mask layer. 0.35-μm-width Al wirings were fabricated even on a 1-μm-high step. 0.2-μm-spaces (aspect ratio=2.5) between the taper shaped Al lines were filled, for the first time, by a plasma enhanced chemical vapor deposition (PECVD) fluorine doped silicon oxide (SiOF) film (ε=3.9). The SiOF film capped with the PECVD SiO2 film has enough stability for the process integration. It was confirmed that these technologies can be applied to a double level Al interconnection using a 0.3-μm-diameter tungsten (W) plug.
本文言語 | English |
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ページ(範囲) | 1140-1144 |
ページ数 | 5 |
ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
巻 | 37 |
号 | 3 SUPPL. B |
DOI | |
出版ステータス | Published - 1998 3月 |
外部発表 | はい |
ASJC Scopus subject areas
- 工学(全般)
- 物理学および天文学(全般)