A 0.7-μm-pitch double level Al interconnection technology for 1-Gbit DRAMs using SiO2 mask Al etching and plasma enhanced chemical vapor deposition SiOF
Takashi Yokoyama, Yoshiaki Yamada, Koji Kishimoto, Tatsuya Usami, Hideaki Kawamoto, Kazuyoshi Ueno, Hideki Gomi
研究成果: Article › 査読