A 1. 3 V supply voltage AIGaAs/lnGaAs HJFET SCFL D-FF operating at up to 10 gbps

Masahiro Fujii; Tadashi Maeda; Yasuo Ohno

A 1. 3 V supply voltage AIGaAs/lnGaAs HJFET SCFL D-FF operating at up to 10 gbps

Masahiro Fujii, Tadashi Maeda, Yasuo Ohno

研究成果: Article › 査読

抄録

A high speed and low power consumption SCFL circuit design with low supply voltage is proposed. Focusing on the relationship between logic swing and supply voltage, the lower limit for the supply voltage is presented. Theoretical analysis and circuit simulation indicates that the logic swing needs to be optimized to maintain high average g_m within the swing. An SCFL D-FF fabricated using a 0. 25 μm n-AlGaAs/i-InGaAs HJFET process operates at up to lOGbps with power consumption as low as 19 mW at a supply voltage of 1. 3 V.

本文言語	English
ページ（範囲）	512-516
ページ数	5
ジャーナル	IEICE Transactions on Electronics
巻	E79-C
号	4
出版ステータス	Published - 1996 1 1
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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引用スタイル

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abstract = "A high speed and low power consumption SCFL circuit design with low supply voltage is proposed. Focusing on the relationship between logic swing and supply voltage, the lower limit for the supply voltage is presented. Theoretical analysis and circuit simulation indicates that the logic swing needs to be optimized to maintain high average gm within the swing. An SCFL D-FF fabricated using a 0. 25 μm n-AlGaAs/i-InGaAs HJFET process operates at up to lOGbps with power consumption as low as 19 mW at a supply voltage of 1. 3 V.",

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AU - Maeda, Tadashi

AU - Ohno, Yasuo

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Y1 - 1996/1/1

N2 - A high speed and low power consumption SCFL circuit design with low supply voltage is proposed. Focusing on the relationship between logic swing and supply voltage, the lower limit for the supply voltage is presented. Theoretical analysis and circuit simulation indicates that the logic swing needs to be optimized to maintain high average gm within the swing. An SCFL D-FF fabricated using a 0. 25 μm n-AlGaAs/i-InGaAs HJFET process operates at up to lOGbps with power consumption as low as 19 mW at a supply voltage of 1. 3 V.

AB - A high speed and low power consumption SCFL circuit design with low supply voltage is proposed. Focusing on the relationship between logic swing and supply voltage, the lower limit for the supply voltage is presented. Theoretical analysis and circuit simulation indicates that the logic swing needs to be optimized to maintain high average gm within the swing. An SCFL D-FF fabricated using a 0. 25 μm n-AlGaAs/i-InGaAs HJFET process operates at up to lOGbps with power consumption as low as 19 mW at a supply voltage of 1. 3 V.

KW - D-FF

KW - Gaas

KW - Heterojunction fet

KW - High speed

KW - Logic swing

KW - Low power

KW - Low supply voltage

KW - SCFL

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