A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

研究成果: Paper

7 引用 (Scopus)

抜粋

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

元の言語English
ページ141-144
ページ数4
出版物ステータスPublished - 2002 1 1
イベント2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
継続期間: 2002 6 22002 6 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
United States
Seatle, WA
期間02/6/202/6/4

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Numata, K., Takahashi, Y., Maeda, T., & Hida, H. (2002). A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. 141-144. 論文発表場所 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States.