A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

研究成果: Conference contribution

7 引用 (Scopus)

抄録

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

元の言語English
ホスト出版物のタイトルIEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers
ページ141-144
ページ数4
出版物ステータスPublished - 2002
外部発表Yes
イベント2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
継続期間: 2002 6 22002 6 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
United States
Seatle, WA
期間02/6/202/6/4

Fingerprint

Global system for mobile communications
Poles
Switches
Antennas
Voltage control
Networks (circuits)
Electric potential
Insertion losses
Resistors
Transmitters
Capacitors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Media Technology

これを引用

Numata, K., Takahashi, Y., Maeda, T., & Hida, H. (2002). A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers (pp. 141-144)

A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. / Numata, Keiichi; Takahashi, Yuji; Maeda, Tadashi; Hida, Hikaru.

IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 141-144.

研究成果: Conference contribution

Numata, K, Takahashi, Y, Maeda, T & Hida, H 2002, A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. pp. 141-144, 2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium, Seatle, WA, United States, 02/6/2.
Numata K, Takahashi Y, Maeda T, Hida H. A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. : IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. p. 141-144
Numata, Keiichi ; Takahashi, Yuji ; Maeda, Tadashi ; Hida, Hikaru. / A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application. IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers. 2002. pp. 141-144
@inproceedings{d81f20b9a0a14ce68e8842ce24380fa3,
title = "A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application",
abstract = "We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.",
author = "Keiichi Numata and Yuji Takahashi and Tadashi Maeda and Hikaru Hida",
year = "2002",
language = "English",
pages = "141--144",
booktitle = "IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers",

}

TY - GEN

T1 - A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

AU - Numata, Keiichi

AU - Takahashi, Yuji

AU - Maeda, Tadashi

AU - Hida, Hikaru

PY - 2002

Y1 - 2002

N2 - We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

AB - We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

UR - http://www.scopus.com/inward/record.url?scp=0036309583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036309583&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036309583

SP - 141

EP - 144

BT - IEEE Radio Frequency Integrated Circuits Symposium, RFIC, Digest of Technical Papers

ER -