A +2.4/0 V controlled high power GaAs SPDT antenna switch IC for GSM application

Keiichi Numata, Yuji Takahashi, Tadashi Maeda, Hikaru Hida

研究成果: Paper査読

8 被引用数 (Scopus)

抄録

We have developed a high-power-handling and low-voltage-controlled GaAs single-pole dual-throw (SPDT) antenna switch for GSM application. The switch circuit configuration has a capacitor at the antenna terminal and two resistors between the transmitter (Tx) and receiver (Rx) terminals and the control terminals. This circuit enables the DC voltages of the Tx terminal and the Rx terminal to be separated from each other, resulting in a high-power-handling operation at a lower control voltage than that for the conventional switch. The developed SPDT switch demonstrated a handling power of 37.5 dBm and an insertion loss of 0.37 dB with a control voltage of +2.4/0 V.

本文言語English
ページ141-144
ページ数4
出版ステータスPublished - 2002 1 1
外部発表はい
イベント2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium - Seatle, WA, United States
継続期間: 2002 6 22002 6 4

Other

Other2002 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium
国/地域United States
CitySeatle, WA
Period02/6/202/6/4

ASJC Scopus subject areas

  • 工学(全般)

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