A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit

Shinichi Tanaka, Takanori Noguchi

研究成果: Conference contribution

抄録

This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64% (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.

本文言語English
ホスト出版物のタイトル2019 49th European Microwave Conference, EuMC 2019
出版社Institute of Electrical and Electronics Engineers Inc.
ページ595-598
ページ数4
ISBN(電子版)9782874870552
DOI
出版ステータスPublished - 2019 10
イベント49th European Microwave Conference, EuMC 2019 - Paris, France
継続期間: 2019 10 12019 10 3

出版物シリーズ

名前2019 49th European Microwave Conference, EuMC 2019

Conference

Conference49th European Microwave Conference, EuMC 2019
国/地域France
CityParis
Period19/10/119/10/3

ASJC Scopus subject areas

  • コンピュータ ネットワークおよび通信
  • 器械工学

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