A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit

Shinichi Tanaka, Takanori Noguchi

研究成果: Conference contribution

抄録

This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64% (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.

元の言語English
ホスト出版物のタイトル2019 49th European Microwave Conference, EuMC 2019
出版者Institute of Electrical and Electronics Engineers Inc.
ページ595-598
ページ数4
ISBN(電子版)9782874870552
DOI
出版物ステータスPublished - 2019 10
イベント49th European Microwave Conference, EuMC 2019 - Paris, France
継続期間: 2019 10 12019 10 3

出版物シリーズ

名前2019 49th European Microwave Conference, EuMC 2019

Conference

Conference49th European Microwave Conference, EuMC 2019
France
Paris
期間19/10/119/10/3

Fingerprint

Gates (transistor)
rectifiers
Field effect transistors
field effect transistors
Networks (circuits)
harmonics
Electric lines
Tuning
Bandwidth
transmission lines
Composite materials
direct current
tuning
prototypes
impedance
bandwidth
composite materials

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Instrumentation

これを引用

Tanaka, S., & Noguchi, T. (2019). A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit. : 2019 49th European Microwave Conference, EuMC 2019 (pp. 595-598). [8910959] (2019 49th European Microwave Conference, EuMC 2019). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/EuMC.2019.8910959

A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit. / Tanaka, Shinichi; Noguchi, Takanori.

2019 49th European Microwave Conference, EuMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. p. 595-598 8910959 (2019 49th European Microwave Conference, EuMC 2019).

研究成果: Conference contribution

Tanaka, S & Noguchi, T 2019, A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit. : 2019 49th European Microwave Conference, EuMC 2019., 8910959, 2019 49th European Microwave Conference, EuMC 2019, Institute of Electrical and Electronics Engineers Inc., pp. 595-598, 49th European Microwave Conference, EuMC 2019, Paris, France, 19/10/1. https://doi.org/10.23919/EuMC.2019.8910959
Tanaka S, Noguchi T. A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit. : 2019 49th European Microwave Conference, EuMC 2019. Institute of Electrical and Electronics Engineers Inc. 2019. p. 595-598. 8910959. (2019 49th European Microwave Conference, EuMC 2019). https://doi.org/10.23919/EuMC.2019.8910959
Tanaka, Shinichi ; Noguchi, Takanori. / A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit. 2019 49th European Microwave Conference, EuMC 2019. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 595-598 (2019 49th European Microwave Conference, EuMC 2019).
@inproceedings{0917a3d510e8471aa12a35b9cca0aa42,
title = "A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit",
abstract = "This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64{\%} (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.",
keywords = "composite right-/left-handed transmission line, harmonic tuning, power amplifier, rectifier",
author = "Shinichi Tanaka and Takanori Noguchi",
year = "2019",
month = "10",
doi = "10.23919/EuMC.2019.8910959",
language = "English",
series = "2019 49th European Microwave Conference, EuMC 2019",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "595--598",
booktitle = "2019 49th European Microwave Conference, EuMC 2019",

}

TY - GEN

T1 - A 2.45-GHz Self-Synchronous GaN FET Rectifier Using CRLH-TL-Based Gate Control Circuit

AU - Tanaka, Shinichi

AU - Noguchi, Takanori

PY - 2019/10

Y1 - 2019/10

N2 - This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64% (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.

AB - This paper presents a novel FET rectifier using one-port composite right-/left-handed transmission line as gate control circuit (GCC). The circuit is extremely compact and yet can control the gate impedance both at the fundamental frequency and at the 2nd harmonic frequency for self-synchronous operation of the rectifier. The prototype 2.45-GHz GaN FET rectifier rectified RF power of 34 dBm with RF-DC efficiency of 64% (without correcting for reflection). Compared with the rectifier using microstrip-based circuit, the proposed rectifier performed just as good, or even better, in terms of efficiency and bandwidth. The class-B FET rectifier of this work can potentially operate with higher efficiency by harmonic tuning at the drain circuit.

KW - composite right-/left-handed transmission line

KW - harmonic tuning

KW - power amplifier

KW - rectifier

UR - http://www.scopus.com/inward/record.url?scp=85076341793&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85076341793&partnerID=8YFLogxK

U2 - 10.23919/EuMC.2019.8910959

DO - 10.23919/EuMC.2019.8910959

M3 - Conference contribution

AN - SCOPUS:85076341793

T3 - 2019 49th European Microwave Conference, EuMC 2019

SP - 595

EP - 598

BT - 2019 49th European Microwave Conference, EuMC 2019

PB - Institute of Electrical and Electronics Engineers Inc.

ER -