A 7-Mask CMOS Process with Selective Oxide Deposition

T.Horiuchi T.Horiuchi, K.Kanba K.Kanba, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

研究成果: Article

12 引用 (Scopus)
元の言語English
ページ(範囲)1455-1460
ジャーナルIEEE Transaction on Electron Devices
40
出版物ステータスPublished - 1993 8 1

これを引用

T.Horiuchi, T. H., K.Kanba, K. K., T.Homma, T. H., Y.Murao, Y. M., K.Okumura, K. O., & Homma, T. (1993). A 7-Mask CMOS Process with Selective Oxide Deposition. IEEE Transaction on Electron Devices, 40, 1455-1460.

A 7-Mask CMOS Process with Selective Oxide Deposition. / T.Horiuchi, T.Horiuchi; K.Kanba, K.Kanba; T.Homma, T.Homma; Y.Murao, Y.Murao; K.Okumura, K.Okumura; Homma, Tetsuya.

:: IEEE Transaction on Electron Devices, 巻 40, 01.08.1993, p. 1455-1460.

研究成果: Article

T.Horiuchi, TH, K.Kanba, KK, T.Homma, TH, Y.Murao, YM, K.Okumura, KO & Homma, T 1993, 'A 7-Mask CMOS Process with Selective Oxide Deposition', IEEE Transaction on Electron Devices, 巻. 40, pp. 1455-1460.
T.Horiuchi TH, K.Kanba KK, T.Homma TH, Y.Murao YM, K.Okumura KO, Homma T. A 7-Mask CMOS Process with Selective Oxide Deposition. IEEE Transaction on Electron Devices. 1993 8 1;40:1455-1460.
T.Horiuchi, T.Horiuchi ; K.Kanba, K.Kanba ; T.Homma, T.Homma ; Y.Murao, Y.Murao ; K.Okumura, K.Okumura ; Homma, Tetsuya. / A 7-Mask CMOS Process with Selective Oxide Deposition. :: IEEE Transaction on Electron Devices. 1993 ; 巻 40. pp. 1455-1460.
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