A compact HBT device model based on a one-flux treatment of carrier transport

Shin ichi Tanaka, M. S. Lundstrom

研究成果: Article

25 引用 (Scopus)

抜粋

A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

元の言語English
ページ(範囲)401-410
ページ数10
ジャーナルSolid State Electronics
37
発行部数3
DOI
出版物ステータスPublished - 1994 3

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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