A compact HBT device model based on a one-flux treatment of carrier transport

Shin ichi Tanaka, M. S. Lundstrom

研究成果: Article査読

26 被引用数 (Scopus)

抄録

A new approach to modeling the current vs voltage characteristics of heterojunction bipolar transistors (HBTs) is introduced. Using McKelvey's flux method to treat carrier transport, provides a strong, physical basis for modeling the complex device physics in modern HBTs. We formulate the new model for general, double heterojunction bipolar transistors and show that the results reduce to those obtained by the conventional current balancing approach only under specific, simplifying conditions. We also extend the model to treat quasi-ballistic transport in short base HBTs.

本文言語English
ページ(範囲)401-410
ページ数10
ジャーナルSolid State Electronics
37
3
DOI
出版ステータスPublished - 1994 3
外部発表はい

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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