A Flux-Based Approach to HBT Device Modeling.

S.Tanaka S.Tanaka, M.S.Lundstrom M.S.Lundstrom, Shinichi Tanaka

研究成果: Article

2 引用 (Scopus)
元の言語English
ページ(範囲)505-509
ジャーナルIEEE International Electron Device Meeting
出版物ステータスPublished - 1993 1 1

これを引用

A Flux-Based Approach to HBT Device Modeling. / S.Tanaka, S.Tanaka; M.S.Lundstrom, M.S.Lundstrom; Tanaka, Shinichi.

:: IEEE International Electron Device Meeting, 01.01.1993, p. 505-509.

研究成果: Article

S.Tanaka, S.Tanaka ; M.S.Lundstrom, M.S.Lundstrom ; Tanaka, Shinichi. / A Flux-Based Approach to HBT Device Modeling. :: IEEE International Electron Device Meeting. 1993 ; pp. 505-509.
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