Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.
|ジャーナル||Technical Digest - International Electron Devices Meeting|
|出版ステータス||Published - 2000 12月 1|
|イベント||2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States|
継続期間: 2000 12月 10 → 2000 12月 13
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