A high reliability copper dual-damascene interconnection with direct-contact via structure

K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, T. Tonegawa, N. Ito, K. Arita, Y. Tsuchiya, T. Wake, A. Kubo, K. Sugai, N. Oda, H. Miyamoto, S. Saito

研究成果: Conference article

17 引用 (Scopus)

抜粋

Direct-contact via (DCV) structure in which a Cu via-plug is directly contacted to an interconnect is proposed for a high reliability and high performance Cu dual-damascene (DD) interconnection. Distribution of electromigration (EM) lifetime is dramatically reduced to 0.1 by eliminating void formation at the via-bottom. The developed technology improves the lifetime of the early failure by 5 times. It leads to 1.7 times higher clock frequency due to the higher current density.

元の言語English
ページ(範囲)265-268
ページ数4
ジャーナルTechnical Digest - International Electron Devices Meeting
出版物ステータスPublished - 2000 12 1
イベント2000 IEEE International Electron Devices Meeting - San Francisco, CA, United States
継続期間: 2000 12 102000 12 13

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Ueno, K., Suzuki, M., Matsumoto, A., Motoyama, K., Tonegawa, T., Ito, N., Arita, K., Tsuchiya, Y., Wake, T., Kubo, A., Sugai, K., Oda, N., Miyamoto, H., & Saito, S. (2000). A high reliability copper dual-damascene interconnection with direct-contact via structure. Technical Digest - International Electron Devices Meeting, 265-268.