A High-Speed Frequency Divider Using n+ -Ge Gate AlGaAs/GaAs MISFET's

Shuichi Fujita, Makoto Hirano, Koichi Maezawa, Takashi Mizutani

    研究成果: Article

    3 引用 (Scopus)

    抜粋

    A high-speed divide-by-four static frequency divider is fabricated using n+-Ge gate AlGaAs/GaAs heterostructure MISFET's. The divider circuit consists of two master-slave T-type flip-flops (T-FF's) and an output buffer based on source-coupled FET logic (SCFL). A maximum toggle frequency of 11.3 GHz with a power dissipation of 219 mW per T-F/F is obtained at 300 K using 1.0-μm gate FET's.

    元の言語English
    ページ(範囲)226-227
    ページ数2
    ジャーナルIEEE Electron Device Letters
    8
    発行部数5
    DOI
    出版物ステータスPublished - 1987 5

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Electrical and Electronic Engineering

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