A high transconductance GaAs MESFET with reduced short channel effect characteristics

K.Ueno K.Ueno; T.Furutsuka T.Furutsuka; H.Toyoshima H.Toyoshima; M.Kanamari M.Kanamari; A.Higashisaka A.Higashisaka; Kazuyoshi Ueno

A high transconductance GaAs MESFET with reduced short channel effect characteristics

K.Ueno K.Ueno, T.Furutsuka T.Furutsuka, H.Toyoshima H.Toyoshima, M.Kanamari M.Kanamari, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

機能制御システム専攻

研究成果: Article

12 引用（Scopus）

元の言語	English
ページ（範囲）	82-85
ジャーナル	1985 IDEM Technical Digest
出版物ステータス	Published - 1985 12 1

これを引用

K.Ueno, K. U., T.Furutsuka, T. F., H.Toyoshima, H. T., M.Kanamari, M. K., A.Higashisaka, A. H., & Ueno, K. (1985). A high transconductance GaAs MESFET with reduced short channel effect characteristics. 1985 IDEM Technical Digest, 82-85.

@article{69f6ea0dc5d84c3183676373ea6dd628,

title = "A high transconductance GaAs MESFET with reduced short channel effect characteristics",

author = "K.Ueno K.Ueno and T.Furutsuka T.Furutsuka and H.Toyoshima H.Toyoshima and M.Kanamari M.Kanamari and A.Higashisaka A.Higashisaka and Kazuyoshi Ueno",

year = "1985",

month = dec,

day = "1",

language = "English",

pages = "82--85",

journal = "1985 IDEM Technical Digest",

}

TY - JOUR

T1 - A high transconductance GaAs MESFET with reduced short channel effect characteristics

AU - K.Ueno, K.Ueno

AU - T.Furutsuka, T.Furutsuka

AU - H.Toyoshima, H.Toyoshima

AU - M.Kanamari, M.Kanamari

AU - A.Higashisaka, A.Higashisaka

AU - Ueno, Kazuyoshi

PY - 1985/12/1

Y1 - 1985/12/1

M3 - Article

SP - 82

EP - 85

JO - 1985 IDEM Technical Digest

JF - 1985 IDEM Technical Digest

ER -