A high transconductance GaAs MESFET with reduced short channel effect characteristics

K.Ueno K.Ueno; T.Furutsuka T.Furutsuka; H.Toyoshima H.Toyoshima; M.Kanamari M.Kanamari; A.Higashisaka A.Higashisaka; Kazuyoshi Ueno

A high transconductance GaAs MESFET with reduced short channel effect characteristics

K.Ueno K.Ueno, T.Furutsuka T.Furutsuka, H.Toyoshima H.Toyoshima, M.Kanamari M.Kanamari, A.Higashisaka A.Higashisaka, Kazuyoshi Ueno

機能制御システム専攻

研究成果: Article › 査読

12 被引用数 (Scopus)

本文言語	English
ページ（範囲）	82-85
ジャーナル	1985 IDEM Technical Digest
出版ステータス	Published - 1985 12月 1

引用スタイル

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title = "A high transconductance GaAs MESFET with reduced short channel effect characteristics",

author = "K.Ueno K.Ueno and T.Furutsuka T.Furutsuka and H.Toyoshima H.Toyoshima and M.Kanamari M.Kanamari and A.Higashisaka A.Higashisaka and Kazuyoshi Ueno",

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T1 - A high transconductance GaAs MESFET with reduced short channel effect characteristics

AU - K.Ueno, K.Ueno

AU - T.Furutsuka, T.Furutsuka

AU - H.Toyoshima, H.Toyoshima

AU - M.Kanamari, M.Kanamari

AU - A.Higashisaka, A.Higashisaka

AU - Ueno, Kazuyoshi

PY - 1985/12/1

Y1 - 1985/12/1

M3 - Article

SP - 82

EP - 85

JO - 1985 IDEM Technical Digest

JF - 1985 IDEM Technical Digest

ER -