A hysteresis loop in electrical resistance of NbH x observed above the β - λ transition temperature

Yuki Sasahara, Ryota Shimizu, Hiroyuki Oguchi, Kazunori Nishio, Shohei Ogura, Hitoshi Morioka, Shin Ichi Orimo, Katsuyuki Fukutani, Taro Hitosugi

研究成果: Article

2 引用 (Scopus)

抜粋

We investigate the electron transport properties and structures of β-NbH x (010) epitaxial thin films on Al 2 O 3 (001) substrates with a variety of hydrogen contents. NbH x epitaxial thin films with x ≥ 0.77 exhibit a hysteresis loop in their resistance near room temperature. Notably, this hysteresis loop appears above the β-λ phase transition temperature. Detailed analysis of the temperature dependence of these structures suggests that the short-range ordering of hydrogen rearrangement in the λ-phase remains locally above the transition temperature, inducing the hysteresis in the resistance.

元の言語English
記事番号015027
ジャーナルAIP Advances
9
発行部数1
DOI
出版物ステータスPublished - 2019 1 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

フィンガープリント A hysteresis loop in electrical resistance of NbH <sub>x</sub> observed above the β - λ transition temperature' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Sasahara, Y., Shimizu, R., Oguchi, H., Nishio, K., Ogura, S., Morioka, H., Orimo, S. I., Fukutani, K., & Hitosugi, T. (2019). A hysteresis loop in electrical resistance of NbH x observed above the β - λ transition temperature AIP Advances, 9(1), [015027]. https://doi.org/10.1063/1.5066367