A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, Masayuki Shimojo, K. Furuya

研究成果: Article

9 引用 (Scopus)

抄録

A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

元の言語English
記事番号425305
ジャーナルNanotechnology
20
発行部数42
DOI
出版物ステータスPublished - 2009
外部発表Yes

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Molybdenum oxide
Photodetectors
Electron beams
Photoconductivity
Optical devices
Nanowires
Wire
Annealing

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

これを引用

A nanosized photodetector fabricated by electron-beam-induced deposition. / Makise, K.; Mitsuishi, K.; Shimojo, Masayuki; Furuya, K.

:: Nanotechnology, 巻 20, 番号 42, 425305, 2009.

研究成果: Article

Makise, K. ; Mitsuishi, K. ; Shimojo, Masayuki ; Furuya, K. / A nanosized photodetector fabricated by electron-beam-induced deposition. :: Nanotechnology. 2009 ; 巻 20, 番号 42.
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