A nanosized photodetector fabricated by electron-beam-induced deposition

K. Makise, K. Mitsuishi, M. Shimojo, K. Furuya

研究成果: Article

9 引用 (Scopus)

抜粋

A sensitive nanosized molybdenum oxide (MoOx) photodetector is manufactured at a desired position by electron-beam-induced deposition (EBID). As-deposited MoOx had a conductivity ∼300Scm-1. After 2h annealing at 573K, the conductivity of nanowires decreased 10 times to ∼30Scm-1 and MoOx had photoconductivity. Nanosized MoOx wires enhanced the sensitivity of optical devices due to an increased surface area to volume ratio.

元の言語English
記事番号425305
ジャーナルNanotechnology
20
発行部数42
DOI
出版物ステータスPublished - 2009 10 12

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ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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