A new interlayer formation technology for completely planarized multilevel interconnection by using LPD

T. Homma, T. Katoh, Y. Yamada, J. Shimizu, Y. Murao

研究成果: Conference article査読

12 被引用数 (Scopus)

抄録

A description is given of a newly developed selective interlayer dielectrics formation technology to realize completely planarized multilevel interconnections. The technology uses liquid phase deposition (LPD) at extremely low temperature (∼40°C). This technology has the capability to realize high density VLSIs such as logic devices beyond 100-kgate and memory devices beyond 16-Mb because of the low thermal stress and the excellent planarization characteristics. This technology eliminates key hole formation in spacings among wirings. Selective deposition is possible by LPD. Compared with conventional CVD films, the LPD-SiO2 film has excellent properties for interlayer dielectrics. A completely planarized two-level interconnection using the LPD technology is discussed.

本文言語English
論文番号5727439
ページ(範囲)3-4
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
DOI
出版ステータスPublished - 1990 12 1
外部発表はい
イベント1990 Symposium on VLSI Technology - Honolulu, HI, United States
継続期間: 1990 6 41990 6 7

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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