A novel CoWP cap integration for porous low-k/Cu interconnects with NH 3 plasma treatment and low-k top (LKT) dielectric structure

N. Kawahara, M. Tagami, B. Withers, Y. Kakuhura, H. Imura, K. Ohto, T. Taiji, K. Arita, T. Kurokawa, M. Nagase, T. Maruyama, N. Oda, Y. Hayashi, J. Jacobs, M. Sakurai, M. Sekine, K. Ueno

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

A novel CoWP cap integration technology for lower leakage current and improved dielectric reliability is proposed for porous low-k/Cu interconnects, NH2 plasma treatment before SiCN deposition reduces leakage current and improves dielectric reliability such us time-dependent dielectric break-down (TDDB) of CoWP capped Cu interconnects. The TDDB lifetime much longer than 10 years is obtained. Moreover, the leakage current less than 1E-14A/mm is obtained by low-k top (LKT) dielectric structure combined with the NH3 plasma treatment. In addition. 10% lower RC product is obtained by the LKT structure with CoWP cap.

本文言語English
ホスト出版物のタイトル2006 International Interconnect Technology Conference, IITC
ページ152-154
ページ数3
DOI
出版ステータスPublished - 2006
外部発表はい
イベント2006 International Interconnect Technology Conference, IITC - Burlingame, CA, United States
継続期間: 2006 6月 52006 6月 7

出版物シリーズ

名前2006 International Interconnect Technology Conference, IITC

Conference

Conference2006 International Interconnect Technology Conference, IITC
国/地域United States
CityBurlingame, CA
Period06/6/506/6/7

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 電子工学および電気工学

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