A numerical study on oxygen transport in silicon melt in a double-crucible method

Naoki Ono, Michio Kida, Yoshiaki Arai, Kensho Sahira

研究成果: Article査読

6 被引用数 (Scopus)

抄録

Oxygen transport in the silicon melt in the double-crucible method was simulated by using the k-ε{lunate} turbulent flow model. The high eddy diffusivity of oxygen calculated from the eddy dynamic viscosity is postulated in the present model. In the mechanisms found in the simulation, the small distance between the hot inner crucible and the melt/crystal interface was the most dominant reason for the increase of the oxygen concentration in the case of the double-crucible method.

本文言語English
ページ(範囲)427-434
ページ数8
ジャーナルJournal of Crystal Growth
137
3-4
DOI
出版ステータスPublished - 1994 4 1
外部発表はい

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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