抄録
A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.
本文言語 | English |
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ページ(範囲) | 378-381 |
ページ数 | 4 |
ジャーナル | Surface Science |
巻 | 174 |
号 | 1-3 |
DOI | |
出版ステータス | Published - 1986 8月 3 |
ASJC Scopus subject areas
- 凝縮系物理学
- 表面および界面
- 表面、皮膜および薄膜
- 材料化学