A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe; M. Hirano; K. Arai; F. Yanagawa; K. Tsubaki

doi:10.1016/0039-6028(86)90437-1

A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

K. Oe, M. Hirano, K. Arai, F. Yanagawa, K. Tsubaki

研究成果: Article › 査読

1 被引用数 (Scopus)

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A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

本文言語	English
ページ（範囲）	378-381
ページ数	4
ジャーナル	Surface Science
巻	174
号	1-3
DOI	https://doi.org/10.1016/0039-6028(86)90437-1
出版ステータス	Published - 1986 8 3

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/0039-6028(86)90437-1

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abstract = "A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.",

author = "K. Oe and M. Hirano and K. Arai and F. Yanagawa and K. Tsubaki",

year = "1986",

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T1 - A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

AU - Oe, K.

AU - Hirano, M.

AU - Arai, K.

AU - Yanagawa, F.

AU - Tsubaki, K.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

AB - A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.

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U2 - 10.1016/0039-6028(86)90437-1

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JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-3

ER -

A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

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