抜粋
A p-channel AlGaAs/GaAs heterostructure FET which operates in MIS-transistor like mode has been investigated for implementation in a complementary logic circuit. Maximum values of transconductances of 100 mS/mm at 77 K and 50 mS/mm at 300 K have been achieved in a device with 1 microm gate length. The improvement at 77 K is attributed to an increased mobility of the two-dimensional hole gas which was confirmed by Shubnikov-de Haas oscillations at 4.2 K.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 378-381 |
| ページ数 | 4 |
| ジャーナル | Surface Science |
| 巻 | 174 |
| 発行部数 | 1-3 |
| DOI | |
| 出版物ステータス | Published - 1986 8 3 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
フィンガープリント A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Oe, K., Hirano, M., Arai, K., Yanagawa, F., & Tsubaki, K. (1986). A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas. Surface Science, 174(1-3), 378-381. https://doi.org/10.1016/0039-6028(86)90437-1