A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two-dimensional hole gas

Engineering & Materials Science

• Field effect transistors 51%
• Gases 27%
• Heterojunctions 63%
• Logic circuits 55%
• Management information systems 60%
• Transconductance 58%
• Transistors 41%

Physics & Astronomy

• aluminum gallium arsenides 45%
• field effect transistors 38%
• gases 24%
• logic circuits 64%
• MIS (semiconductors) 54%
• oscillations 30%
• transconductance 53%
• transistors 38%

Chemical Compounds

• Compound Mobility 37%
• Hole Gas 100%
• Length 28%
• Transconductance 74%