A quantitative model for the blueshift induced by rapid thermal annealing in GaNAs/GaAs triple quantum wells

Yijun Sun, Takashi Egawa, Hiroyasu Ishikawa

研究成果査読

5 被引用数 (Scopus)

抄録

The effects of rapid thermal annealing (RTA) on the optical properties of GaNAs/GaAs triple quantum wells were analyzed using the photoluminescence (PL) spectroscopy at 77 K. It was found that the blueshift was due to the coupling between radiative recombination of PL emission and nonradiative recombination of nonradiative centers. A quantitative model was proposed in which the blueshift is proportional to the relative change of the concentration of nonradiative centers. It was observed that the blueshift induced by RTA could be caused by a number of mechanisms.

本文言語English
ページ(範囲)2586-2591
ページ数6
ジャーナルJournal of Applied Physics
96
5
DOI
出版ステータスPublished - 2004 9 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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