A quarter-micron planarized interconnection technology with self-aligned plug

Kazuyoshi Ueno, K. Ohto, K. Tsunenari, K. Kajiyana, K. Kikuta, T. Kikkawa

研究成果: Conference contribution

10 被引用数 (Scopus)

抄録

In order to realize minimum pitch interconnections without degrading reliability, self-aligned contacts (SACs) between interconnections and plugs are necessary. The planarized interconnections with SAC plugs is formed for quarter-micron size as follows. Interconnection trenches and contact holes are formed using a self-aligned etch-stop layer, followed by simultaneous metal-filling into the trenches and contact holes. Si-rich oxide (SRO) films are found to be promising for a self-aligned etch-stop layer with their high etching selectivity to SiO2 as high as 10-30. Sufficiently low line resistance of 15 k Omega /cm and low contact resistance of 70 Omega /contact are obtained with the quarter-micron W-interconnection with the SAC plugs.

本文言語English
ホスト出版物のタイトル1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
出版社Institute of Electrical and Electronics Engineers Inc.
ページ305-308
ページ数4
ISBN(電子版)0780308174
DOI
出版ステータスPublished - 1992 1 1
外部発表はい
イベント1992 International Technical Digest on Electron Devices Meeting, IEDM 1992 - San Francisco, United States
継続期間: 1992 12 131992 12 16

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
1992-December
ISSN(印刷版)0163-1918

Conference

Conference1992 International Technical Digest on Electron Devices Meeting, IEDM 1992
国/地域United States
CitySan Francisco
Period92/12/1392/12/16

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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