A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama; Y.Yamada Y.Yamada; K.Kishimoto K.Kishimoto; T.Usami T.Usami; H.Kawamoto H.Kawamoto; H.Gomi H.Gomi; K.Ueno K.Ueno; Kazuyoshi Ueno

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

機能制御ｼｽﾃﾑ専攻

研究成果: Article

元の言語	English
ページ（範囲）	288-290
ジャーナル	Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
出版物ステータス	Published - 1997 9 1

これを引用

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H.Kawamoto, H. K., H.Gomi, H. G., K.Ueno, K. U., & Ueno, K. (1997). A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 288-290.

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. / T.Yokoyama, T.Yokoyama; Y.Yamada, Y.Yamada; K.Kishimoto, K.Kishimoto; T.Usami, T.Usami; H.Kawamoto, H.Kawamoto; H.Gomi, H.Gomi; K.Ueno, K.Ueno; Ueno, Kazuyoshi.

：: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 01.09.1997, p. 288-290.

研究成果: Article

T.Yokoyama, T.Yokoyama ; Y.Yamada, Y.Yamada ; K.Kishimoto, K.Kishimoto ; T.Usami, T.Usami ; H.Kawamoto, H.Kawamoto ; H.Gomi, H.Gomi ; K.Ueno, K.Ueno ; Ueno, Kazuyoshi. / A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. ：: Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials. 1997 ; pp. 288-290.

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AU - K.Kishimoto, K.Kishimoto

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AU - Ueno, Kazuyoshi

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