A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama; Y.Yamada Y.Yamada; K.Kishimoto K.Kishimoto; T.Usami T.Usami; H.Kawamoto H.Kawamoto; H.Gomi H.Gomi; K.Ueno K.Ueno; Kazuyoshi Ueno

A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

機能制御システム専攻

研究成果: Article › 査読

本文言語	English
ページ（範囲）	288-290
ジャーナル	Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials
出版ステータス	Published - 1997 9月 1

引用スタイル

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title = "A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF",

author = "T.Yokoyama T.Yokoyama and Y.Yamada Y.Yamada and K.Kishimoto K.Kishimoto and T.Usami T.Usami and H.Kawamoto H.Kawamoto and H.Gomi H.Gomi and K.Ueno K.Ueno and Kazuyoshi Ueno",

year = "1997",

month = sep,

day = "1",

language = "English",

pages = "288--290",

journal = "Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials",

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TY - JOUR

T1 - A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

AU - T.Yokoyama, T.Yokoyama

AU - Y.Yamada, Y.Yamada

AU - K.Kishimoto, K.Kishimoto

AU - T.Usami, T.Usami

AU - H.Kawamoto, H.Kawamoto

AU - H.Gomi, H.Gomi

AU - K.Ueno, K.Ueno

AU - Ueno, Kazuyoshi

PY - 1997/9/1

Y1 - 1997/9/1

M3 - Article

SP - 288

EP - 290

JO - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials

JF - Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials

ER -