A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF

T.Yokoyama T.Yokoyama, Y.Yamada Y.Yamada, K.Kishimoto K.Kishimoto, T.Usami T.Usami, H.Kawamoto H.Kawamoto, H.Gomi H.Gomi, K.Ueno K.Ueno, Kazuyoshi Ueno

研究成果: Article

元の言語English
ページ(範囲)288-290
ジャーナルExtended Abstracts of 1997 International Conf. On Solid State Devices and Materials
出版物ステータスPublished - 1997 9 1

これを引用

T.Yokoyama, T. Y., Y.Yamada, Y. Y., K.Kishimoto, K. K., T.Usami, T. U., H.Kawamoto, H. K., H.Gomi, H. G., K.Ueno, K. U., & Ueno, K. (1997). A reliable double level interconnection technology for giga bit DRAMs using SiO2 mask Al etching and PECVD SiOF. Extended Abstracts of 1997 International Conf. On Solid State Devices and Materials, 288-290.