A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections

T.Homma T.Homma, T.Katoh T.Katoh, Y.Yamada Y.Yamada, Y.Murao Y.Murao, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	2410-2414
ジャーナル	Journal of the Electrochemical Society
巻	140
出版ステータス	Published - 1993 8月 1

引用スタイル

@article{3cd6f50a79834558ac41f26abdbfb2de,

title = "A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections",

author = "T.Homma T.Homma and T.Katoh T.Katoh and Y.Yamada Y.Yamada and Y.Murao Y.Murao and Tetsuya Homma",

year = "1993",

month = aug,

day = "1",

language = "English",

volume = "140",

pages = "2410--2414",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

}

TY - JOUR

T1 - A Selective SiO2 Film Formation Technology Using Liquid Phase Deposition for Fully Planarized Multilevel Interconnections

AU - T.Homma, T.Homma

AU - T.Katoh, T.Katoh

AU - Y.Yamada, Y.Yamada

AU - Y.Murao, Y.Murao

AU - Homma, Tetsuya

PY - 1993/8/1

Y1 - 1993/8/1

M3 - Article

VL - 140

SP - 2410

EP - 2414

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

ER -