抜粋
In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 177-182 |
| ページ数 | 6 |
| ジャーナル | Solid State Electronics |
| 巻 | 38 |
| 発行部数 | 1 |
| DOI | |
| 出版物ステータス | Published - 1995 1 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
フィンガープリント A small-signal, one-flux analysis of short-base transport' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。
これを引用
Alam, M. A., Tanaka, S. I., & Lundstrom, M. S. (1995). A small-signal, one-flux analysis of short-base transport. Solid State Electronics, 38(1), 177-182. https://doi.org/10.1016/0038-1101(94)E0043-E