A small-signal, one-flux analysis of short-base transport

M. A. Alam, Shin Ichi Tanaka, M. S. Lundstrom

研究成果: Article査読

9 被引用数 (Scopus)

抄録

In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.

本文言語English
ページ(範囲)177-182
ページ数6
ジャーナルSolid State Electronics
38
1
DOI
出版ステータスPublished - 1995 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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