TY - JOUR
T1 - A small-signal, one-flux analysis of short-base transport
AU - Alam, M. A.
AU - Tanaka, Shin Ichi
AU - Lundstrom, M. S.
PY - 1995/1
Y1 - 1995/1
N2 - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
AB - In this paper, we present an exactly solvable small-signal model to analyze transport in the base region of a bipolar transistor. Both graded-base and uniform-base structures are considered. The solutions describe both ballistic and diffusive transport under specific, simplifying conditions. Moreover, these results are in excellent agreement with a numerical solution of the Boltzmann equation. This model predicts a number of interesting features of the current-gain factor α(f) in the quasi-ballistic regime and explains the importance of scattering, however small, on the base transport properties of electrons. Finally, we use this model to interpret some recent experiments on short-base transport.
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U2 - 10.1016/0038-1101(94)E0043-E
DO - 10.1016/0038-1101(94)E0043-E
M3 - Article
AN - SCOPUS:0029226894
VL - 38
SP - 177
EP - 182
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 1
ER -