抄録
This paper proposes an accurate four-transistor temperature sensor designed, and developed, for thermal testing and monitoring circuits in deep submicron technologies. A previous three-transistor temperature sensor, which utilizes the temperature characteristic of the threshold voltage, shows highly linear characteristics at a power supply voltage of 1.8 V or more; however, the supply voltage is reduced to 1 V in a 90-nm CMOS process. Since the temperature coefficient of the operating point's current at a 1-V supply voltage is steeper than the coefficient at a 1.8-V supply voltage, the operating point's current at high temperature becomes quite small and the output voltage goes into the subthreshold region or the cutoff region. Therefore, the operating condition of the conventional temperature sensor cannot be satisfied at 1-V supply and this causes degradation of linearity. To improve linearity at a 1-V supply voltage, one transistor is added to the conventional sensor. This additional transistor, which works in the saturation region, changes the temperature coefficient gradient of the operating point's current and moves the operating points at each temperature to appropriate positions within the targeted temperature range.
| 元の言語 | English |
|---|---|
| 記事番号 | 4512063 |
| ページ（範囲） | 201-207 |
| ページ数 | 7 |
| ジャーナル | IEEE Transactions on Semiconductor Manufacturing |
| 巻 | 21 |
| 発行部数 | 2 |
| DOI | |
| 出版物ステータス | Published - 2008 5 |
| 外部発表 | Yes |
Fingerprint
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Industrial and Manufacturing Engineering
- Physics and Astronomy (miscellaneous)
- Condensed Matter Physics
これを引用
A temperature sensor with an inaccuracy of -1/+0.8 °C using 90-nm 1-V CMOS for online thermal monitoring of VLSI circuits. / Sasaki, Masahiro; Ikeda, Makoto; Asada, Kunihiro.
：: IEEE Transactions on Semiconductor Manufacturing, 巻 21, 番号 2, 4512063, 05.2008, p. 201-207.研究成果: Article
}
TY - JOUR
T1 - A temperature sensor with an inaccuracy of -1/+0.8 °C using 90-nm 1-V CMOS for online thermal monitoring of VLSI circuits
AU - Sasaki, Masahiro
AU - Ikeda, Makoto
AU - Asada, Kunihiro
PY - 2008/5
Y1 - 2008/5
N2 - This paper proposes an accurate four-transistor temperature sensor designed, and developed, for thermal testing and monitoring circuits in deep submicron technologies. A previous three-transistor temperature sensor, which utilizes the temperature characteristic of the threshold voltage, shows highly linear characteristics at a power supply voltage of 1.8 V or more; however, the supply voltage is reduced to 1 V in a 90-nm CMOS process. Since the temperature coefficient of the operating point's current at a 1-V supply voltage is steeper than the coefficient at a 1.8-V supply voltage, the operating point's current at high temperature becomes quite small and the output voltage goes into the subthreshold region or the cutoff region. Therefore, the operating condition of the conventional temperature sensor cannot be satisfied at 1-V supply and this causes degradation of linearity. To improve linearity at a 1-V supply voltage, one transistor is added to the conventional sensor. This additional transistor, which works in the saturation region, changes the temperature coefficient gradient of the operating point's current and moves the operating points at each temperature to appropriate positions within the targeted temperature range.
AB - This paper proposes an accurate four-transistor temperature sensor designed, and developed, for thermal testing and monitoring circuits in deep submicron technologies. A previous three-transistor temperature sensor, which utilizes the temperature characteristic of the threshold voltage, shows highly linear characteristics at a power supply voltage of 1.8 V or more; however, the supply voltage is reduced to 1 V in a 90-nm CMOS process. Since the temperature coefficient of the operating point's current at a 1-V supply voltage is steeper than the coefficient at a 1.8-V supply voltage, the operating point's current at high temperature becomes quite small and the output voltage goes into the subthreshold region or the cutoff region. Therefore, the operating condition of the conventional temperature sensor cannot be satisfied at 1-V supply and this causes degradation of linearity. To improve linearity at a 1-V supply voltage, one transistor is added to the conventional sensor. This additional transistor, which works in the saturation region, changes the temperature coefficient gradient of the operating point's current and moves the operating points at each temperature to appropriate positions within the targeted temperature range.
KW - CMOS
KW - Temperature coefficient
KW - Temperature sensor
KW - Thermal diode
KW - Thermal monitoring
KW - Two-point calibration
UR - http://www.scopus.com/inward/record.url?scp=43849087500&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=43849087500&partnerID=8YFLogxK
U2 - 10.1109/TSM.2008.2000424
DO - 10.1109/TSM.2008.2000424
M3 - Article
AN - SCOPUS:43849087500
VL - 21
SP - 201
EP - 207
JO - IEEE Transactions on Semiconductor Manufacturing
JF - IEEE Transactions on Semiconductor Manufacturing
SN - 0894-6507
IS - 2
M1 - 4512063
ER -