A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics

Masami Tokumitsu, Makoto Hirano, Taiichi Otsuji, Satoru Yamaguchi, Kimitoshi Yamazaki

    研究成果: Article

    16 引用 (Scopus)
    元の言語English
    ページ(範囲)211-214
    ジャーナルIEEE IEDM Tch.Dig.
    出版物ステータスPublished - 1996 4 1

    これを引用

    Tokumitsu, M., Hirano, M., Otsuji, T., Yamaguchi, S., & Yamazaki, K. (1996). A0.1 um Self-Aligned-Gate GaAs MESFETwith Multilayer Interconnection Structure for Ultra-High-Speed Ics. IEEE IEDM Tch.Dig., 211-214.