Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane

T. Yanagi, Y. Ohki, H. Nishikawa

研究成果: Paper

抜粋

Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.

元の言語English
ページ1088-1091
ページ数4
出版物ステータスPublished - 2003 10 20
イベントProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya, Japan
継続期間: 2003 6 12003 6 5

Conference

ConferenceProceedings of the 7th International Conference on Properties and Applications of Dielectric Materials
Japan
Nagoya
期間03/6/103/6/5

    フィンガープリント

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry

これを引用

Yanagi, T., Ohki, Y., & Nishikawa, H. (2003). Absorption changes induced by UV-photon irradiation in Ge-doped SiO2 thin films fabricated by plasma CVD method from tetraethoxysilane. 1088-1091. 論文発表場所 Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials, Nagoya, Japan.