Optical absorption changes induced by the irradiation of ultraviolet photons in Ge-doped SiO2 thin films fabricated by plasma-enhanced chemical vapor deposition from tetraethoxysilane are studied. It is confirmed that the sample has a higher photo-sensitivity compared with bulk Ge-doped SiO2 fabricated by conventional vapor-phase axial deposition. This is ascribed to the fact that the Ge E' center, a typical paramagnetic defect center in Ge-doped SiO2 with a large optical absorption, is induced by the photon irradiation. Namely, the high photo-sensitivity originates from large concentrations of two oxygen-deficient precursors of the Ge E' center, the germanium lone pair center and the neutral oxygen vacancy. It is suggested that residual hydrogen from tetraethoxysilane also contributes to the induced optical absorption.
|出版ステータス||Published - 2003 10月 20|
|イベント||Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials - Nagoya, Japan|
継続期間: 2003 6月 1 → 2003 6月 5
|Conference||Proceedings of the 7th International Conference on Properties and Applications of Dielectric Materials|
|Period||03/6/1 → 03/6/5|
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