Accurate HJFET current-voltage model including temperature dependence for a circuit simulator

Noriaki Matsuno, Hitoshi Yano, Hikaru Hida, Tadashi Maeda

研究成果: Article査読

抄録

We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.

本文言語English
ページ(範囲)977-984
ページ数8
ジャーナルSolid-State Electronics
43
5
DOI
出版ステータスPublished - 1999 5
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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