We present a new hetero-junction FET (HJFET) current-voltage (I-V) model intended for implementation with a large signal simulator. The developed model takes into account the temperature dependence of drift current, diffusion current and gate diode current. The drift current model is based on our previous reported model, which is based on gradual channel approximation taking into account the nonlinear field dependence of electron velocity. We found through measurements that transconductance, gm, drain conductance, gD, and threshold voltage, VT, vary as linear functions of temperature. To describe the dependence, we introduced linear functions of temperature into the gm, gD and VT descriptions. We also added the temperature dependence description to the diode current model and the diffusion current model. Although our model describes the temperature dependence using quite simple formulas, the simulated results agree well with the measurements.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry