AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.

本文言語English
ホスト出版物のタイトルState-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII) -and- Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI
出版社Electrochemical Society Inc.
ページ259-265
ページ数7
2
ISBN(電子版)9781607685395
出版ステータスPublished - 2006
外部発表はい
イベント43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10 162005 10 21

出版物シリーズ

名前ECS Transactions
番号2
1
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
国/地域United States
CityLos Angeles, CA
Period05/10/1605/10/21

ASJC Scopus subject areas

  • 工学(全般)

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