AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

研究成果: Conference contribution

2 引用 (Scopus)

抄録

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency f T of 56 GHz and the maximum oscillation frequency f max of 115 GHz.

元の言語English
ホスト出版物のタイトルECS Transactions
編集者J.J. Wang, R.C. Fitch, R. Fen
ページ259-265
ページ数7
1
エディション2
出版物ステータスPublished - 2005
外部発表Yes
イベント43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10 162005 10 21

Other

Other43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society
United States
Los Angeles, CA
期間05/10/1605/10/21

Fingerprint

High electron mobility transistors
Electrodes
Substrates
Cutoff frequency
Contact resistance
Fabrication
Silicon

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H., & Egawa, T. (2005). AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. : J. J. Wang, R. C. Fitch, & R. Fen (版), ECS Transactions (2 版, 巻 1, pp. 259-265)

AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. / Kaifu, Katsuaki; Mita, Juro; Ito, Masanori; Sano, Yoshiaki; Ishikawa, Hiroyasu; Egawa, Takashi.

ECS Transactions. 版 / J.J. Wang; R.C. Fitch; R. Fen. 巻 1 2. 編 2005. p. 259-265.

研究成果: Conference contribution

Kaifu, K, Mita, J, Ito, M, Sano, Y, Ishikawa, H & Egawa, T 2005, AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. : JJ Wang, RC Fitch & R Fen (版), ECS Transactions. 2 Edn, 巻. 1, pp. 259-265, 43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society, Los Angeles, CA, United States, 05/10/16.
Kaifu K, Mita J, Ito M, Sano Y, Ishikawa H, Egawa T. AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. : Wang JJ, Fitch RC, Fen R, 編集者, ECS Transactions. 2 版 巻 1. 2005. p. 259-265
Kaifu, Katsuaki ; Mita, Juro ; Ito, Masanori ; Sano, Yoshiaki ; Ishikawa, Hiroyasu ; Egawa, Takashi. / AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. ECS Transactions. 編集者 / J.J. Wang ; R.C. Fitch ; R. Fen. 巻 1 2. 版 2005. pp. 259-265
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