AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates

Katsuaki Kaifu, Juro Mita, Masanori Ito, Yoshiaki Sano, Hiroyasu Ishikawa, Takashi Egawa

研究成果: Conference article

2 引用 (Scopus)

抜粋

In this paper, we report first time the successfully fabrication of AlGaN/GaN-HEMTs (High Electron Mobility Transistors) with recessed ohmic and recessed gate electrodes on silicon substrates. By optimizing ohmic recess depth, the lowest contact resistance of 0.7 Ωmm was realized at the recess depth which is deeper than AlN/i-GaN interface. In this process, the gate recess depth was also optimized. As a result, HEMT having gate length of 0.2 μm exhibited the maximum extrinsic trans-conductance gm-max of as high as 330 mS/mm, the maximum unity current cut-off frequency fT of 56 GHz and the maximum oscillation frequency fmax of 115 GHz.

元の言語English
ページ(範囲)259-265
ページ数7
ジャーナルECS Transactions
1
発行部数2
出版物ステータスPublished - 2005 12 1
イベント43rd State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XLIII)and Nitride and Wide Bandgap Semiconductors for Sensors, Photonics, and Electronics VI Symposium - 208th Meetingof the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10 162005 10 21

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Kaifu, K., Mita, J., Ito, M., Sano, Y., Ishikawa, H., & Egawa, T. (2005). AlGaN/GaN HEMTs with recessed ohmic electrodes on Si substrates. ECS Transactions, 1(2), 259-265.