An Asymmetric Side Wall Process for High Performance LDD MOSFET's

T.Horiuchi T.Horiuchi, T.Homma T.Homma, Y.Murao Y.Murao, K.Okumura K.Okumura, Tetsuya Homma

研究成果: Article › 査読

本文言語	English
ページ（範囲）	186-190
ジャーナル	IEEE Transactions on Electron Devices
巻	41
出版ステータス	Published - 1994 2月 1

引用スタイル

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title = "An Asymmetric Side Wall Process for High Performance LDD MOSFET's",

author = "T.Horiuchi T.Horiuchi and T.Homma T.Homma and Y.Murao Y.Murao and K.Okumura K.Okumura and Tetsuya Homma",

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AU - T.Horiuchi, T.Horiuchi

AU - T.Homma, T.Homma

AU - Y.Murao, Y.Murao

AU - K.Okumura, K.Okumura

AU - Homma, Tetsuya

PY - 1994/2/1

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SP - 186

EP - 190

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

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