An investigation of the mechanical strengthening effect of hydrogen anneal for silicon torsion bar

Ryo Hajika, Shinya Yoshida, Yoshiaki Kanamori, Masayoshi Esashi, Shuji Tanaka

研究成果: Article査読

14 被引用数 (Scopus)

抄録

This paper reports on the use of hydrogen anneal to enhance the torsional fracture strength of dry-etched single crystal silicon (SCS) microstructures. Moving-magnet-type scanning mirrors with torsion bars were employed as fracture test specimens. Two types of device were fabricated using SCS and silicon-on-insulator (SOI) wafers by deep reactive ion etching (DRIE). For the SCS-wafer-based device, scalloping on DRIE sidewalls were smoothed out and the fracture strength of the torsion bar was improved by a factor of three by 120 min hydrogen anneal. For the SOI-wafer-based device, hydrogen anneal introduced surface irregularity onto the Si sidewalls by hydrogen-induced etching with the existence of SiO2. As a result, the fracture strength of the torsion bar was degraded contrarily. Therefore, hydrogen anneal is effective in improving the mechanical reliability of SCS microstructures without SiO2.

本文言語English
論文番号105014
ジャーナルJournal of Micromechanics and Microengineering
24
10
DOI
出版ステータスPublished - 2014 10月 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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