An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET

Hayate Okuhara, Kuniaki Kitamori, Yu Fujita, Kimiyoshi Usami, Hideharu Amano

研究成果: Conference contribution

12 引用 (Scopus)

抄録

Body bias control is an efficient means of balancing the trade-off between leakage power and performance especially for chips with silicon on thin buried oxide (SOTB), a type of FD-SOI technology. In this work, a method for finding the optimal combination of the supply voltage and body bias voltage to the core and memory is proposed and applied to a real micro-controller chip using SOTB CMOS technology. By obtaining several coefficients of equations for leakage power, switching power and operational frequency from the real chip measurements, the optimized voltage setting can be obtained for the target operational frequency. The power consumption lost by the error of optimization is 12.6% at maximum, and it can save at most 73.1% of power from the cases where only the body bias voltage is optimized. This method can be applied to the latest FD-SOI technologies.

元の言語English
ホスト出版物のタイトルProceedings of the International Symposium on Low Power Electronics and Design
出版者Institute of Electrical and Electronics Engineers Inc.
ページ207-212
ページ数6
2015-September
ISBN(印刷物)9781467380096
DOI
出版物ステータスPublished - 2015 9 21
イベント20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015 - Rome, Italy
継続期間: 2015 7 222015 7 24

Other

Other20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015
Italy
Rome
期間15/7/2215/7/24

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Bias voltage
Silicon
Controllers
Oxides
Electric potential
Electric power utilization
Data storage equipment

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Okuhara, H., Kitamori, K., Fujita, Y., Usami, K., & Amano, H. (2015). An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET. : Proceedings of the International Symposium on Low Power Electronics and Design (巻 2015-September, pp. 207-212). [7273515] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISLPED.2015.7273515

An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET. / Okuhara, Hayate; Kitamori, Kuniaki; Fujita, Yu; Usami, Kimiyoshi; Amano, Hideharu.

Proceedings of the International Symposium on Low Power Electronics and Design. 巻 2015-September Institute of Electrical and Electronics Engineers Inc., 2015. p. 207-212 7273515.

研究成果: Conference contribution

Okuhara, H, Kitamori, K, Fujita, Y, Usami, K & Amano, H 2015, An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET. : Proceedings of the International Symposium on Low Power Electronics and Design. 巻. 2015-September, 7273515, Institute of Electrical and Electronics Engineers Inc., pp. 207-212, 20th IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2015, Rome, Italy, 15/7/22. https://doi.org/10.1109/ISLPED.2015.7273515
Okuhara H, Kitamori K, Fujita Y, Usami K, Amano H. An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET. : Proceedings of the International Symposium on Low Power Electronics and Design. 巻 2015-September. Institute of Electrical and Electronics Engineers Inc. 2015. p. 207-212. 7273515 https://doi.org/10.1109/ISLPED.2015.7273515
Okuhara, Hayate ; Kitamori, Kuniaki ; Fujita, Yu ; Usami, Kimiyoshi ; Amano, Hideharu. / An optimal power supply and body bias voltage for a ultra low power micro-controller with silicon on thin box MOSFET. Proceedings of the International Symposium on Low Power Electronics and Design. 巻 2015-September Institute of Electrical and Electronics Engineers Inc., 2015. pp. 207-212
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