Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

H. Onodera, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

元の言語English
ホスト出版物のタイトルTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
出版者Nano Science and Technology Institute
ページ499-502
ページ数4
2
ISBN(印刷物)9781482258271
出版物ステータスPublished - 2014
イベントNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC
継続期間: 2014 6 152014 6 18

Other

OtherNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
Washington, DC
期間14/6/1514/6/18

Fingerprint

High electron mobility transistors
Electric breakdown
Buffer layers
Electric fields
aluminum gallium nitride

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

これを引用

Onodera, H., Hanawa, H., & Horio, K. (2014). Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. : Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (巻 2, pp. 499-502). Nano Science and Technology Institute.

Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. / Onodera, H.; Hanawa, H.; Horio, Kazushige.

Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. 巻 2 Nano Science and Technology Institute, 2014. p. 499-502.

研究成果: Conference contribution

Onodera, H, Hanawa, H & Horio, K 2014, Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. : Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. 巻. 2, Nano Science and Technology Institute, pp. 499-502, Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014, Washington, DC, 14/6/15.
Onodera H, Hanawa H, Horio K. Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. : Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. 巻 2. Nano Science and Technology Institute. 2014. p. 499-502
Onodera, H. ; Hanawa, H. ; Horio, Kazushige. / Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014. 巻 2 Nano Science and Technology Institute, 2014. pp. 499-502
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