Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

H. Onodera, H. Hanawa, K. Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

本文言語English
ホスト出版物のタイトルTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
出版社Nano Science and Technology Institute
ページ499-502
ページ数4
ISBN(印刷版)9781482258271
出版ステータスPublished - 2014 1 1
イベントNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
継続期間: 2014 6 152014 6 18

出版物シリーズ

名前Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
2

Conference

ConferenceNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
国/地域United States
CityWashington, DC
Period14/6/1514/6/18

ASJC Scopus subject areas

  • ハードウェアとアーキテクチャ
  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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