Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs

H. Onodera, H. Hanawa, K. Horio

研究成果: Conference contribution

抜粋

Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

元の言語English
ホスト出版物のタイトルTechnical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
出版者Nano Science and Technology Institute
ページ499-502
ページ数4
ISBN(印刷物)9781482258271
出版物ステータスPublished - 2014 1 1
イベントNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States
継続期間: 2014 6 152014 6 18

出版物シリーズ

名前Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
2

Conference

ConferenceNanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014
United States
Washington, DC
期間14/6/1514/6/18

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

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  • これを引用

    Onodera, H., Hanawa, H., & Horio, K. (2014). Analysis of breakdown characteristics in gate and source field-plate AlGaN/GaN HEMTs. : Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 (pp. 499-502). (Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014; 巻数 2). Nano Science and Technology Institute.