抄録
Two-dimensional analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the fielld-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little smaller than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.
| 本文言語 | English |
|---|---|
| ホスト出版物のタイトル | Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 |
| 出版社 | Nano Science and Technology Institute |
| ページ | 499-502 |
| ページ数 | 4 |
| ISBN（印刷版） | 9781482258271 |
| 出版ステータス | Published - 2014 1月 1 |
| イベント | Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 - Washington, DC, United States 継続期間: 2014 6月 15 → 2014 6月 18 |
出版物シリーズ
| 名前 | Technical Proceedings of the 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 |
|---|---|
| 巻 | 2 |
Conference
| Conference | Nanotechnology 2014: MEMS, Fluidics, Bio Systems, Medical, Computational and Photonics - 2014 NSTI Nanotechnology Conference and Expo, NSTI-Nanotech 2014 |
|---|---|
| 国/地域 | United States |
| City | Washington, DC |
| Period | 14/6/15 → 14/6/18 |
ASJC Scopus subject areas
- ハードウェアとアーキテクチャ
- 電子工学および電気工学
- 電子材料、光学材料、および磁性材料