Analysis of breakdown characteristics in source field-plate AlGaN/GaN HEMTs

Hiraku Onodera, Hideyuki Hanawa, Kazushige Horio

研究成果: Article査読

3 被引用数 (Scopus)

抄録

Two-dimensional analysis of off-state breakdown characteristics of source field-plate AlGaN/GaN HEMTs is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that the introduction of field plate is effective in improving the breakdown voltage, but it can decrease with the field-plate length, and hence its optimum length should exist. It is also shown that the breakdown voltage of the source field-plate structure is a little lower than that of the gate field-plate structure when the field-plate length is short, because the electric field at the drain edge of the gate becomes higher.

本文言語English
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
DOI
出版ステータスAccepted/In press - 2016

ASJC Scopus subject areas

  • 凝縮系物理学

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