Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Kai Nakamura, Hideyuki Hanawa, Kazushige Horio

研究成果: Conference contribution

抜粋

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

元の言語English
ホスト出版物のタイトル2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ247-250
ページ数4
ISBN(電子版)9781538665022
DOI
出版物ステータスPublished - 2018 11 27
イベント2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
継続期間: 2018 10 152018 10 17

Other

Other2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
United States
San Diego
期間18/10/1518/10/17

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

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    Nakamura, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. : 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp. 247-250). [8551096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS.2018.8551096