Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

Kai Nakamura, Hideyuki Hanawa, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

元の言語English
ホスト出版物のタイトル2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ247-250
ページ数4
ISBN(電子版)9781538665022
DOI
出版物ステータスPublished - 2018 11 27
イベント2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 - San Diego, United States
継続期間: 2018 10 152018 10 17

Other

Other2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018
United States
San Diego
期間18/10/1518/10/17

Fingerprint

High electron mobility transistors
high electron mobility transistors
Passivation
passivity
breakdown
Electric breakdown
electrical faults
Drain current
dimensional analysis
Permittivity
Electric fields
insulators
permittivity
Electric potential
electric fields
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Instrumentation
  • Electronic, Optical and Magnetic Materials

これを引用

Nakamura, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. : 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018 (pp. 247-250). [8551096] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/BCICTS.2018.8551096

Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. / Nakamura, Kai; Hanawa, Hideyuki; Horio, Kazushige.

2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 247-250 8551096.

研究成果: Conference contribution

Nakamura, K, Hanawa, H & Horio, K 2018, Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. : 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018., 8551096, Institute of Electrical and Electronics Engineers Inc., pp. 247-250, 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018, San Diego, United States, 18/10/15. https://doi.org/10.1109/BCICTS.2018.8551096
Nakamura K, Hanawa H, Horio K. Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. : 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 247-250. 8551096 https://doi.org/10.1109/BCICTS.2018.8551096
Nakamura, Kai ; Hanawa, Hideyuki ; Horio, Kazushige. / Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 247-250
@inproceedings{a9d7ce9b36ef4e1f80918ab429adb15f,
title = "Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title",
abstract = "Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.",
keywords = "Breakdown voltage, GaN, HEMT, High-k passivation layer",
author = "Kai Nakamura and Hideyuki Hanawa and Kazushige Horio",
year = "2018",
month = "11",
day = "27",
doi = "10.1109/BCICTS.2018.8551096",
language = "English",
pages = "247--250",
booktitle = "2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
address = "United States",

}

TY - GEN

T1 - Analysis of Breakdown Characteristics of AIGaN/GaN HEMTs with Low- k IHigh- k Double Passivation Layers Paper Title

AU - Nakamura, Kai

AU - Hanawa, Hideyuki

AU - Horio, Kazushige

PY - 2018/11/27

Y1 - 2018/11/27

N2 - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

AB - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AIGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN or high- k dielectric) and double passivation layers (SiN and high- k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly as compared to the case of SiN single passivation layer when comparing at the same insulator thickness. This is because the electric field around the drain edge of gate is weakened. However, it is lowered remarkably as compared to the case with a high- k single passivation layer even if the first SiN layer is rather thin. Also, in the case of double passivation layers, the breakdown voltage is shown to become close to the case with high- k passivation layer when the relative permittivity of the second passivation layer becomes high and the SiN layer is thin.

KW - Breakdown voltage

KW - GaN

KW - HEMT

KW - High-k passivation layer

UR - http://www.scopus.com/inward/record.url?scp=85060020743&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85060020743&partnerID=8YFLogxK

U2 - 10.1109/BCICTS.2018.8551096

DO - 10.1109/BCICTS.2018.8551096

M3 - Conference contribution

AN - SCOPUS:85060020743

SP - 247

EP - 250

BT - 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -