Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

K. Nakano, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

抄録

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.

元の言語English
ホスト出版物のタイトル2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
出版者Institute of Electrical and Electronics Engineers Inc.
ページ131-134
ページ数4
ISBN(電子版)9781538643921
DOI
出版物ステータスPublished - 2018 5 1
イベント1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China
継続期間: 2018 5 162018 5 18

出版物シリーズ

名前2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Conference

Conference1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
China
Xi'an
期間18/5/1618/5/18

Fingerprint

High electron mobility transistors
Passivation
Electric breakdown
Drain current
Permittivity
Electric fields
aluminum gallium nitride
Electric potential

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

これを引用

Nakano, K., Hanawa, H., & Horio, K. (2018). Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. : 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 (pp. 131-134). [8734668] (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/WiPDAAsia.2018.8734668

Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. / Nakano, K.; Hanawa, H.; Horio, Kazushige.

2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 131-134 8734668 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).

研究成果: Conference contribution

Nakano, K, Hanawa, H & Horio, K 2018, Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. : 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018., 8734668, 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Institute of Electrical and Electronics Engineers Inc., pp. 131-134, 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, Xi'an, China, 18/5/16. https://doi.org/10.1109/WiPDAAsia.2018.8734668
Nakano K, Hanawa H, Horio K. Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. : 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 131-134. 8734668. (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018). https://doi.org/10.1109/WiPDAAsia.2018.8734668
Nakano, K. ; Hanawa, H. ; Horio, Kazushige. / Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers. 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 131-134 (2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018).
@inproceedings{a4892e3095c543678919e14e3dd9da33,
title = "Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers",
abstract = "Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.",
keywords = "breakdown voltage, GaN, HEMT, high-k passivation layer",
author = "K. Nakano and H. Hanawa and Kazushige Horio",
year = "2018",
month = "5",
day = "1",
doi = "10.1109/WiPDAAsia.2018.8734668",
language = "English",
series = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "131--134",
booktitle = "2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018",

}

TY - GEN

T1 - Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

AU - Nakano, K.

AU - Hanawa, H.

AU - Horio, Kazushige

PY - 2018/5/1

Y1 - 2018/5/1

N2 - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.

AB - Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.

KW - breakdown voltage

KW - GaN

KW - HEMT

KW - high-k passivation layer

UR - http://www.scopus.com/inward/record.url?scp=85068343399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85068343399&partnerID=8YFLogxK

U2 - 10.1109/WiPDAAsia.2018.8734668

DO - 10.1109/WiPDAAsia.2018.8734668

M3 - Conference contribution

AN - SCOPUS:85068343399

T3 - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

SP - 131

EP - 134

BT - 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

PB - Institute of Electrical and Electronics Engineers Inc.

ER -