Analysis of Breakdown Characteristics of AlGaN/GaN HEMTs with Double Passivation Layers

K. Nakano, H. Hanawa, K. Horio

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Two-dimensional analysis of off-state drain current-drain voltage characteristics in AlGaN/GaN high electron mobility transistors is performed; where two cases with a single passivation layer (SiN) and double passivation layers (thin SiN and high-k dielectric) are compared. It is shown that in the case of double passivation layers, the breakdown voltage is enhanced significantly when comparing at the same insulator thickness. This is because in this case the electric field around the drain edge of gate is weakened. Also, in the case of double passivation layers, the breakdown voltage is shown to become higher when the relative permittivity of the second passivation layer becomes higher.

本文言語English
ホスト出版物のタイトル2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
出版社Institute of Electrical and Electronics Engineers Inc.
ページ131-134
ページ数4
ISBN(電子版)9781538643921
DOI
出版ステータスPublished - 2018 5
イベント1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018 - Xi'an, China
継続期間: 2018 5 162018 5 18

出版物シリーズ

名前2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018

Conference

Conference1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018
CountryChina
CityXi'an
Period18/5/1618/5/18

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Control and Optimization
  • Energy Engineering and Power Technology
  • Electrical and Electronic Engineering

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