Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer

T. Kabemura, H. Hanawa, Kazushige Horio

研究成果: Conference contribution

抄録

It is well known that the introduction of field plate increases the breakdown voltage Vbr of AlGaN/GaN HEMTs. As another way to improve Vbr, using a high-k passivation layer is proposed. So, in this study, we combine the two factors and analyzed the breakdown characteristics of field-plate AlGaN/GaN HEMTs as parameters of its rength LFP and the relative permittivity of passivation layer er. It is shown that the enhancement of Vbr with increasing ϵτ is more significant when LFP is relatively short. There is an optimum value of LFP to obtain the highest Vbr, and it is around 0.2 and 0.3 μm when the gate-to-drain distance is 1.5 μm When LFP = 0.3 μm and ϵτr takes a high value of 50, the electric field between the field-plate edge and the drain becomes rather uniform, and Vbr becomes about 400 V, which corresponds to an effective electric field of 2.7 MV/cm between gate and drain.

元の言語English
ホスト出版物のタイトルTechConnect Briefs 2018 - Informatics, Electronics and Microsystems
編集者Matthew Laudon, Fiona Case, Bart Romanowicz, Fiona Case
出版者TechConnect
ページ28-31
ページ数4
4
ISBN(電子版)9780998878256
出版物ステータスPublished - 2018 1 1
イベント11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference - Anaheim, United States
継続期間: 2018 5 132018 5 16

Other

Other11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference
United States
Anaheim
期間18/5/1318/5/16

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High electron mobility transistors
Passivation
Electric fields
Electric breakdown
Permittivity
aluminum gallium nitride

ASJC Scopus subject areas

  • Materials Science(all)

これを引用

Kabemura, T., Hanawa, H., & Horio, K. (2018). Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. : M. Laudon, F. Case, B. Romanowicz, & F. Case (版), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems (巻 4, pp. 28-31). TechConnect.

Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. / Kabemura, T.; Hanawa, H.; Horio, Kazushige.

TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. 版 / Matthew Laudon; Fiona Case; Bart Romanowicz; Fiona Case. 巻 4 TechConnect, 2018. p. 28-31.

研究成果: Conference contribution

Kabemura, T, Hanawa, H & Horio, K 2018, Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. : M Laudon, F Case, B Romanowicz & F Case (版), TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. 巻. 4, TechConnect, pp. 28-31, 11th Annual TechConnect World Innovation Conference and Expo, Held Jointly with the 20th Annual Nanotech Conference and Expo,the 2018 SBIR/STTR Spring Innovation Conference, and the Defense TechConnect DTC Spring Conference, Anaheim, United States, 18/5/13.
Kabemura T, Hanawa H, Horio K. Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. : Laudon M, Case F, Romanowicz B, Case F, 編集者, TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. 巻 4. TechConnect. 2018. p. 28-31
Kabemura, T. ; Hanawa, H. ; Horio, Kazushige. / Analysis of breakdown characteristics of field-plate AlGaN/GaN HEMTs with a high-k passivation layer. TechConnect Briefs 2018 - Informatics, Electronics and Microsystems. 編集者 / Matthew Laudon ; Fiona Case ; Bart Romanowicz ; Fiona Case. 巻 4 TechConnect, 2018. pp. 28-31
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