Analysis of breakdown voltage of field-plate AlGaN/GaN HEMTs as affected by buffer layer's acceptor density

Shinya Akiyama, Masahiro Kondo, Leona Wada, Kazushige Horio

研究成果: Article

2 被引用数 (Scopus)

抄録

We perform a numerical analysis of field-plate AlGaN/GaN HEMTs with a Fe-doped buffer layer with only a deep acceptor as a deep level and study how its density N DA and the length of field-plate L FP affect the breakdown voltage V br. The calculated characteristics usually show abrupt increases in gate and drain currents due to impact ionization, resulting in breakdown. But, in some cases, V br is limited by current flow through the buffer, and this current is higher for lower N DA. Therefore, V br becomes higher for higher N DA. V br takes a maximum value at some L FP, and the highest average electric field between gate and drain becomes about 3.2 MV cm-1 when the breakdown occurs.

本文言語English
論文番号068003
ジャーナルJapanese Journal of Applied Physics
58
6
DOI
出版ステータスPublished - 2019 1 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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