Analysis of Breakdown Voltages in AlGaN/GaN HEMTs with Low-Double Passivation Layers

Engineering & Materials Science

• Passivation 80%
• High electron mobility transistors 77%
• Electric breakdown 75%
• High-k dielectric 35%
• Permittivity 14%
• Drain current 9%
• Electric fields 6%
• Electric potential 3%

Chemical Compounds

• Breakdown Voltage 100%
• Chemical Passivation 67%
• Dielectric Material 19%
• Dielectric Constant 13%
• Drain Current 11%
• Electric Field 6%
• Voltage 5%