Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

Hiraku Onodera, Kazushige Horio

研究成果: Article

33 引用 (Scopus)

抜粋

The two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN high electron mobility transistors with a relatively short gate length and short gate-to-drain distances is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that when the acceptor density in the buffer layer is high, the breakdown voltage is determined by the impact ionization of carriers, and it can decrease with increasing the field-plate length. This is because the distance between the field-plate edge and the drain becomes very short and the electric field there becomes very high. On the other hand, when the acceptor density in the buffer layer is relatively low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

元の言語English
記事番号085016
ジャーナルSemiconductor Science and Technology
27
発行部数8
DOI
出版物ステータスPublished - 2012 8 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用