Analysis of buffer-impurity and field-plate effects on breakdown characteristics in small-sized AlGaN/GaN high electron mobility transistors

Hiraku Onodera, Kazushige Horio

研究成果: Article査読

36 被引用数 (Scopus)

抄録

The two-dimensional analysis of breakdown characteristics in field-plate AlGaN/GaN high electron mobility transistors with a relatively short gate length and short gate-to-drain distances is performed by considering a deep donor and a deep acceptor in a buffer layer. It is shown that when the acceptor density in the buffer layer is high, the breakdown voltage is determined by the impact ionization of carriers, and it can decrease with increasing the field-plate length. This is because the distance between the field-plate edge and the drain becomes very short and the electric field there becomes very high. On the other hand, when the acceptor density in the buffer layer is relatively low, the buffer leakage current becomes very large and this can determine the breakdown voltage, which becomes very low. In this case, the breakdown voltage increases with increasing the field-plate length.

本文言語English
論文番号085016
ジャーナルSemiconductor Science and Technology
27
8
DOI
出版ステータスPublished - 2012 8

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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