Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2007|
|イベント||International Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan|
継続期間: 2006 10月 22 → 2006 10月 27
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