Analysis of buffer-related lag phenomena and current collapse in GaN FETs

K. Itagaki, N. Kobayashi, K. Horio

研究成果: Conference article査読

8 被引用数 (Scopus)

抄録

Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.

本文言語English
ページ(範囲)2666-2669
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
7
DOI
出版ステータスPublished - 2007 12 1
イベントInternational Workshop on Nitride Semiconductors, IWN 2006 - Kyoto, Japan
継続期間: 2006 10 222006 10 27

ASJC Scopus subject areas

  • 凝縮系物理学

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