TY - JOUR
T1 - Analysis of buffer-related lag phenomena and current collapse in GaN FETs
AU - Itagaki, K.
AU - Kobayashi, N.
AU - Horio, K.
PY - 2007/12/1
Y1 - 2007/12/1
N2 - Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.
AB - Drain-current responses of GaN MESFETs with a semi-insulating buffer layer are calculated when the drain voltage and/or the gate voltage are changed abruptly, and pulsed I-V curves are derived from them. It is shown that so-called current collapse or current slump is not so dependent on the gate length LG (0.3 μm - 1 μm), and this is essentially determined by a deep-acceptor density NDA in the buffer layer. LG and NDA dependence of gate lag is also studied, indicating that the gate lag is weaker for longer LG and the lag rate becomes high with NDA, although it may show a saturation behaviour.
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U2 - 10.1002/pssc.200674715
DO - 10.1002/pssc.200674715
M3 - Conference article
AN - SCOPUS:49749145254
VL - 4
SP - 2666
EP - 2669
JO - Physica Status Solidi C: Conferences
JF - Physica Status Solidi C: Conferences
SN - 1862-6351
IS - 7
T2 - International Workshop on Nitride Semiconductors, IWN 2006
Y2 - 22 October 2006 through 27 October 2006
ER -