Analysis of buffer-trapping effects on current collapse of GaN FETs

K. Horio, H. Takayanagi, H. Nakano

研究成果: Conference article

3 被引用数 (Scopus)

抄録

Two-dimensional transient simulation of GaN MESFETs is performed in which a deep donor and a deep acceptor in a semi-insulating buffer layer are considered. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with the steady-state I-V curves. It is shown that the current collapse is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because the trapping effects become more significant. It is suggested that to minimize current collapse in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low, although the current cutoff behaviour may be degraded.

本文言語English
ページ(範囲)2346-2349
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
3
DOI
出版ステータスPublished - 2006 7 31
イベント6th International Conference on Nitride Semiconductors, ICNS-6 - Bremen, Germany
継続期間: 2005 8 282005 9 2

ASJC Scopus subject areas

  • Condensed Matter Physics

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