Analysis of buffer-trapping effects on current reduction and pulsed I-V curves of GaN FETs

H. Takayanagi, H. Nakano, K. Horio

研究成果: Conference contribution

抄録

Two-dimensional transient analyses of GaN MESFETs are performed in which a three level compensation model is adopted for a semi-insulating buffer layer, where a shallow donor, a deep donor and a deep acceptor are included. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that so called current collapse or current reduction is more pronounced for a case with higher acceptor density in the buffer layer, because trapping effects become more significant. It is also shown that the current reduction is more pronounced when the drain voltage is lowered from a higher drain bias during turn-on.

本文言語English
ホスト出版物のタイトルGAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
ページ149-152
ページ数4
出版ステータスPublished - 2005 12 1
イベントGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium - Paris, France
継続期間: 2005 10 32005 10 4

出版物シリーズ

名前GAAS 2005 Conference Proceedings - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
2005

Conference

ConferenceGAAS 2005 - 13th European Gallium Arsenide and Other Compound Semiconductors Application Symposium
CountryFrance
CityParis
Period05/10/305/10/4

ASJC Scopus subject areas

  • Engineering(all)

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