抄録
Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1898-1901 |
| ページ数 | 4 |
| ジャーナル | Physica Status Solidi (C) Current Topics in Solid State Physics |
| 巻 | 5 |
| 発行部数 | 6 |
| DOI | |
| 出版物ステータス | Published - 2008 |
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ASJC Scopus subject areas
- Condensed Matter Physics
これを引用
Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs. / Horio, Kazushige; Nakajima, A.
：: Physica Status Solidi (C) Current Topics in Solid State Physics, 巻 5, 番号 6, 2008, p. 1898-1901.研究成果: Article
}
TY - JOUR
T1 - Analysis of buffer-trapping effects on gate lag, drain lag and current collapse in AlGaN/GaN HEMTs
AU - Horio, Kazushige
AU - Nakajima, A.
PY - 2008
Y1 - 2008
N2 - Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.
AB - Transient simulations of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics, and are compared with steady-state I-V curves. It is shown that the lag phenomena and current collapse could be reproduced. Particularly, the gate lag is correlated with relatively high source access resistance of the FETs. The current collapse is shown to bemore pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current collapse in AlGaN/GaN HEMTs, an acceptor density in the buffer layer should be made low, although the current cutoff behavior may be degraded.
UR - http://www.scopus.com/inward/record.url?scp=70349361793&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=70349361793&partnerID=8YFLogxK
U2 - 10.1002/pssc.200778401
DO - 10.1002/pssc.200778401
M3 - Article
AN - SCOPUS:70349361793
VL - 5
SP - 1898
EP - 1901
JO - Physica Status Solidi (C) Current Topics in Solid State Physics
JF - Physica Status Solidi (C) Current Topics in Solid State Physics
SN - 1862-6351
IS - 6
ER -