抄録
Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1897-1902 |
| ページ数 | 6 |
| ジャーナル | IEEE Transactions on Electron Devices |
| 巻 | 42 |
| 発行部数 | 11 |
| DOI | |
| 出版物ステータス | Published - 1995 11 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
これを引用
Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's. / Horio, Kazushige; Nakatani, Akio.
：: IEEE Transactions on Electron Devices, 巻 42, 番号 11, 11.1995, p. 1897-1902.研究成果: Article
}
TY - JOUR
T1 - Analysis of carrier-blocking effect in AlGaAs/GaAs HBT's with insulating external collector and design criteria for collector-up HBT's
AU - Horio, Kazushige
AU - Nakatani, Akio
PY - 1995/11
Y1 - 1995/11
N2 - Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.
AB - Two-dimensional simulations of cutoff frequencies for AlGaAs/GaAs HBT's with perfectly insulating external collector are made, and the results are compared with those for a case with semi-insulating external collector and for a case with normal n- external collector. It is found that in the case with perfectly insulating external collector, minority carriers injected into the base from the emitter are partially blocked by the insulating layer and accumulate in the external base region. These carriers increase the effective base delay time, resulting in remarkable degradation of the cutoff frequency. In relation to this effect, a collector-up HBT is also simulated, and the design criteria for it are discussed. It is concluded that the effective emitter width should be made narrower than the collector width.
UR - http://www.scopus.com/inward/record.url?scp=0029408398&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0029408398&partnerID=8YFLogxK
U2 - 10.1109/16.469394
DO - 10.1109/16.469394
M3 - Article
AN - SCOPUS:0029408398
VL - 42
SP - 1897
EP - 1902
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 11
ER -