Analysis of correlation between breakdown characteristics and gate-lag phenomena in narrowly-recessed-gate GaAs MESFETs

Y. Mitani, D. Kasai, K. Horio

研究成果: Article査読

本文言語English
ページ(範囲)157-160
ジャーナルProceedings of the 10th European Gallium Arsenide & Other Semiconductor Application Symposium (GAAS 2002), Milan, Italy
出版ステータスPublished - 2002 9 1

引用スタイル