Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs

A. Nakajima, H. Takayanagi, K. Itagaki, K. Horio

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

Two-dimensional transient analyses of AlGaN/GaN HEMTs are performed in which a deep donor and a deep acceptor are considered in a semi-insulating buffer layer. Quasi-pulsed I-V curves are derived from the transient characteristics. It is shown that the deep levels affect the results essentially in a similar way as for GaN MESFETs. It is shown that so-called current slump is more pronounced when the deep-acceptor density in the buffer layer is higher and when an off-state drain voltage is higher, because trapping effects become more significant. It is suggested that to minimize current slump in GaN-based FETs, an acceptor density in a semi-insulating GaN layer should be made low.

元の言語English
ホスト出版物のタイトル2007 International Symposium on Signals, Systems, and Electronics, URSI ISSSE 2007
ページ193-196
ページ数4
DOI
出版物ステータスPublished - 2007 12 1
イベント2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007 - Montreal, QC, Canada
継続期間: 2007 7 302007 8 2

出版物シリーズ

名前Conference Proceedings of the International Symposium on Signals, Systems and Electronics

Conference

Conference2007 International Symposium on Signals, Systems and Electronics, URSI ISSSE 2007
Canada
Montreal, QC
期間07/7/3007/8/2

ASJC Scopus subject areas

  • Signal Processing

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  • これを引用

    Nakajima, A., Takayanagi, H., Itagaki, K., & Horio, K. (2007). Analysis of drain lag and current slump in GaN-based HEMTs and MESFETs. : 2007 International Symposium on Signals, Systems, and Electronics, URSI ISSSE 2007 (pp. 193-196). [4294446] (Conference Proceedings of the International Symposium on Signals, Systems and Electronics). https://doi.org/10.1109/ISSSE.2007.4294446